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TPCA8A09-H |
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| Part Number | TPCA8A09-H |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TPCA8A09-H MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode) TPCA8A09-H 1. Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) ... |
| Features |
(1) (2) (3) (4) (5) (6) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 17 nC (typ.) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP Advance
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (p... |
| Document |
 TPCA8A09-H Data Sheet
PDF 250.63KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TPCA8A01-H |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 2 | TPCA8A02-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | TPCA8A04-H |
Toshiba |
Silicon N-Channel MOSFET |
|
| 4 | TPCA8A08-H |
Toshiba |
Silicon N-Channel MOSFET |
|
| 5 | TPCA8A10-H |
Toshiba |
Field Effect Transistor |
|