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SSU04N65 |
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| Part Number | SSU04N65 |
| Manufacturer | SeCoS Halbleitertechnologie |
| Description | The SSU04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . ... |
| Features |
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available Drain Date Code Millimeter Min. Max. 4.00 4.85 0.68 1.00 0.00 0.30 0.36 0.53 1.50 REF 2.29 2.79 9.60 10.45 Millimeter Min. Max. 1.10 1.45 1.34 REF 8.0 9.15 2.54 REF 14.6 15.85 1.27 REF MARKING 4N65 Gate REF. A b L4 C L3 L1 E REF. c2 b2 D e L L2 PACKAGE INFORMATION Package TO-263 MPQ 0.8K Leader Size 13 inch Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source V... |
| Document |
 SSU04N65 Data Sheet
PDF 419.03KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SSU07N65SL |
SeCoS Halbleitertechnologie |
N-Channel MOSFET |
|
| 2 | SSU102N08S-C |
SeCoS |
N-Channel MOSFET |
|
| 3 | SSU12N70H-C |
SeCoS |
N-Channel Super Junction Power MOSFET |
|
| 4 | SSU130N06S-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 5 | SSU130N06SV-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET |
|