K3511 Renesas MOS FIELD EFFECT TRANSISTOR Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

K3511

Renesas
K3511
K3511 K3511
zoom Click to view a larger image
Part Number K3511
Manufacturer Renesas (https://www.renesas.com/)
Description The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3511 2SK3511-S PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note...
Features
• Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
• Low Ciss: Ciss = 5900 pF TYP.
• Built-in gate protection diode 2SK3511-ZJ 2SK3511-Z Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 75 ±20 ±83 ±260 100 1.5 150
  –55 to +150 52 250 V V A A W W °C °C A mJ (TO-262) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channe...

Document Datasheet K3511 Data Sheet
PDF 142.49KB
Distributor Stock Price Buy

Similar Datasheet

No. Partie # Fabricant Description Fiche Technique
1 K3510
Renesas
N-Channel Power MOSFET Datasheet
2 K3511
Kexin
MOS Field Effect Transistor Datasheet
3 K3515-01MR
Fuji Electric
2SK3515-01MR Datasheet
4 K3518
Fuji Semiconductors
2SK3518 Datasheet
5 K3519PQ-XH
KEC
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Datasheet
More datasheet from Renesas



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact