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IS45S16400J |
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| Part Number | IS45S16400J |
| Manufacturer | ISSI |
| Description | The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous in... |
| Features |
• Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single 3.3V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • Self refresh modes • Auto refresh (CBR) • 4096 refresh cycles every 64 ms (Com, Ind, A1 grade) or 16ms (A2 grade) • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Burst termination b... |
| Document |
 IS45S16400J Data Sheet
PDF 1.14MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IS45S16400C1 |
Integrated Silicon Solution |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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| 2 | IS45S16400E |
Integrated Silicon Solution |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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| 3 | IS45S16400F |
Integrated Silicon Solution |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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| 4 | IS45S16100C1 |
Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
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| 5 | IS45S16100E |
Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM |
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