P11N50Z |
Part Number | P11N50Z |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | NDF11N50Z, NDP11N50Z N-Channel Power MOSFET 500 V, 0.52 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 500 V Rating ... |
Features |
• • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 500 V Rating Drain−to−Source Voltage Continuous Drain Current, RqJC Continuous Drain Current TA = 100°C, RqJC Pulsed Drain Current, VGS @ 10 V Power Dissipation, RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 10.5 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature ... |
Document |
P11N50Z Data Sheet
PDF 125.88KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P11N50CF |
Fairchild Semiconductor |
FQP11N50CF | |
2 | P11NB40FP |
STMicroelectronics |
STP11NB40FP | |
3 | P11NK50Z |
STMicroelectronics |
STP11NK50Z | |
4 | P11NK50ZFP |
STMicroelectronics |
STP11NK50ZFP | |
5 | P11NM50N |
STMicroelectronics |
STP11NM50N |