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P11N50CF |
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| Part Number | P11N50CF |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V • Low Gate Charge (typical 43 nC) • Low Crss (typical 20pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • Fast Recovery Body Diode (typical 90ns) TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for... |
| Document |
 P11N50CF Data Sheet
PDF 1.26MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | P11N50Z |
ON Semiconductor |
NDP11N50Z |
|
| 2 | P11NB40FP |
STMicroelectronics |
STP11NB40FP |
|
| 3 | P11NK50Z |
STMicroelectronics |
STP11NK50Z |
|
| 4 | P11NK50ZFP |
STMicroelectronics |
STP11NK50ZFP |
|
| 5 | P11NM50N |
STMicroelectronics |
STP11NM50N |
|