Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
AP2306AGN-HF |
Click to view a larger image
| Part Number | AP2306AGN-HF |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for a... |
| Features |
℃/W
Data and specifications subject to change without notice
1 200810141
Free Datasheet http://www.datasheet4u.com/
AP2306AGN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=5A VGS=2.5V, ID=2.6A VGS=1.8V, ID=1.0A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o
Min. 30 0.3 -
Typ. 9 8.5 1 3 5 9 20 5 400 90 70
Max. Units 35 50 80 1.2... |
| Document |
 AP2306AGN-HF Data Sheet
PDF 127.03KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP2306AGN-HF-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP2306AGN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP2306AGEN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP2306AGEN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP2306CGN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|