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2SA2009 |
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| Part Number | 2SA2009 |
| Manufacturer | Panasonic Semiconductor |
| Description | Transistors 2SA2009 Silicon PNP epitaxial planer type Unit: mm (0.425) For low-frequency high breakdown voltage amplification I Features • High collector to emitter voltage VCEO • Low noise voltage ... |
| Features |
• High collector to emitter voltage VCEO • Low noise voltage NV 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5˚ 1 2 0.2±0.1 (0.65) (0.65) I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −120 −120 −5 −50 −20 150 150 −55 to +150 Unit V V V mA mA mW °C °C 10˚ 1.3±0.1 2.0±0.2 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S Mini Type Package (3-pin) Marki... |
| Document |
 2SA2009 Data Sheet
PDF 43.81KB |
| Distributor | Stock | Price | Buy |
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