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UPA2816T1S |
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| Part Number | UPA2816T1S |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | The μPA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. R07DS0778EJ0101 Rev.1.01 May 28, 2013 Features • VDSS = −... |
| Features |
• VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 15.5 mΩ MAX. (VGS = −10 V, ID = −17 A) • 4.5 V Gate-drive available • Small & thin type surface mount package with heat spreader • Pb-free and Halogen free HWSON-8 Ordering Information Part No. LEAD PLATING Pure Sn PACKING Tape 5000 p/reel HWSON-8 typ. 0.022 g Package μPA2816T1S-E2-AT ∗1 Note: ∗ 1. Pb-free (This product does not contain Pb in external electrode and other parts.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drai... |
| Document |
 UPA2816T1S Data Sheet
PDF 163.23KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | UPA2810 |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 2 | UPA2811T1L |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 3 | UPA2812T1L |
Renesas |
P-channel MOSFEF |
|
| 4 | UPA2813T1L |
Renesas |
P-channel MOSFEF |
|
| 5 | UPA2814T1S |
Renesas |
P-channel MOSFEF |
|