UPA2815T1S |
Part Number | UPA2815T1S |
Manufacturer | Renesas (https://www.renesas.com/) |
Description | The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. R07DS0777EJ0101 Rev.1.01 May 28, 2013 Features • VDSS = −... |
Features |
• VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 11 mΩ MAX. (VGS = −10 V, ID = −21 A) • 4.5 V Gate-drive available • Small & thin type surface mount package with heat spreader • Pb-free and Halogen free HWSON-8 Ordering Information Part No. Lead Plating Pure Sn Packing Tape 5000 p/reel HWSON-8 typ. 0.022 g Package μPA2815T1S-E2-AT ∗1 Note: ∗ 1. Pb-free (This product does not contain Pb in external electrode and other parts.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain ... |
Document |
UPA2815T1S Data Sheet
PDF 204.47KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPA2810 |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
2 | UPA2811T1L |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
3 | UPA2812T1L |
Renesas |
P-channel MOSFEF | |
4 | UPA2813T1L |
Renesas |
P-channel MOSFEF | |
5 | UPA2814T1S |
Renesas |
P-channel MOSFEF |