IDW20G65C5 |
Part Number | IDW20G65C5 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows imp... |
Features |
Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown voltage tested at 44 mA2) Optimized for high temperature operation Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability du... |
Document |
IDW20G65C5 Data Sheet
PDF 1.14MB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IDW20G65C5B |
Infineon |
Silicon Carbide Diode | |
2 | IDW20G120C5B |
Infineon |
Silicon Carbide Schottky Diode | |
3 | IDW20C65D2 |
Infineon |
Diode | |
4 | IDW24G65C5B |
Infineon |
Silicon Carbide Diode | |
5 | IDW100E60 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode |