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RD07MVS1B |
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| Part Number | RD07MVS1B |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | RD07MVS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power 4.9+/-0.15 1.0+/-0.05 6.0+/-0.15 0.2+/-0.05 amplifiers applications. RD07MVS1B improved a drain surge than RD07MVS1... |
| Features |
Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz)
www.DataSheet.net/
0.2+/-0.05
0.9+/-0.1
High power gain:
Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm
APPLICATION
For output stage of high power amplifiers in VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD07MVS1B-101, T112 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exc... |
| Document |
 RD07MVS1B Data Sheet
PDF 299.83KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RD07MVS1 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor |
|
| 2 | RD07MVS2 |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor |
|
| 3 | RD07MUS2B |
Mitsubishi Electric Semiconductor |
Silicon RF Power MOSFET |
|
| 4 | RD00HHS1 |
Mitsubishi Electric |
RoHS Compliance |
|
| 5 | RD00HVS1 |
Mitsubishi Electric |
RoHS Compliance |
|