Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
RD04HMS2 |
Click to view a larger image
| Part Number | RD04HMS2 |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power 6.0+/-0.15 amplifiers applications. 4.9+/-0.15 0.2+/-0.05 1 1.0+/-0.05 FEATURES 1. High Pow... |
| Features |
1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode
2
3
(0.25) (0.25)
INDEX MARK (Gate)
APPLICATION
For output stage of high power amplifiers in VHF/ UHF/890-950MHz band mobile radio sets.
0.2+/-0.05
0.9+/-0.1
Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm
RoHS COMPLIANT
RD04HMS2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type sol... |
| Document |
 RD04HMS2 Data Sheet
PDF 1.26MB |
| Distributor | Stock | Price | Buy |
|---|
