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VFT30-28 |
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| Part Number | VFT30-28 |
| Manufacturer | Advanced Semiconductor |
| Description | The VFT30-28 is a gold metallized NChannel enhancement mode MOSFET, intended for use in 28VDC large signal applications up to 400MHz. PACKAGE STYLE .380 4L FLG .112 x 45° A B S D Ø.125 NOM. FULL... |
| Features |
• PG = 14 dB Typ. at 30 W /175MHz • 10:1 Load VSWR Capability • Omnigold™ Metalization System F G C D E S I GH MAXIMUM RATINGS ID V(BR)DSS VDGR VGS PDISS TJ TSTG θJC 5.0 A 65 V 65 V ± 40 V 100 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.75 °C/W DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10703 CHARACTERISTICS SYMBOL V(BR)DSS IDSS IGSS... |
| Document |
 VFT30-28 Data Sheet
PDF 96.50KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | VFT30-50 |
Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode |
|
| 2 | VFT300-28 |
Advanced Semiconductor |
VHF POWER MOSFET Silicon N-Channel Enhancement Mode |
|
| 3 | VFT300-50 |
Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode |
|
| 4 | VFT3045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier |
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| 5 | VFT3045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
|