V30120S |
Part Number | V30120S |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | www.vishay.com V30120S, VI30120S Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30120S 3 2 1 PIN ... |
Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 30 A 120 V 300 A 0.74 V 150 °C TO-220AB, TO-262AA Diode variation Single MECHANICAL DATA Case: ... |
Document |
V30120S Data Sheet
PDF 134.44KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | V30120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | V30120C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
3 | V30120CI |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
4 | V30120S |
Vishay Siliconix |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | V30120SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |