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IPB017N06N3G |
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| Part Number | IPB017N06N3G |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | Type IPB017N06N3 G OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM... |
| Features |
• Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPB017N06N3 G Product Summary V DS R DS(on),max ID 60 1.7 180 V mΩ A Package Marking PG-TO263-7 017N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) ... |
| Document |
 IPB017N06N3G Data Sheet
PDF 319.78KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPB017N06N3 |
Infineon |
Power Transistor |
|
| 2 | IPB017N08N5 |
Infineon |
MOSFET |
|
| 3 | IPB017N10N5 |
Infineon |
MOSFET |
|
| 4 | IPB017N10N5LF |
Infineon |
MOSFET |
|
| 5 | IPB010N06N |
Infineon |
MOSFET |
|