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IPA028N08N3G |
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| Part Number | IPA028N08N3G |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-re... |
| Features |
• Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPA028N08N3 G IPA028N08N3 G Product Summary VDS RDS(on),max ID 80 V 2.8 mW 89 A Package PG-TO-220-FP Marking 028N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous ... |
| Document |
 IPA028N08N3G Data Sheet
PDF 378.50KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPA029N06N |
Infineon |
MOSFET |
|
| 2 | IPA029N06N |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPA030N10N3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPA030N10N3 |
Infineon |
Power-Transistor |
|
| 5 | IPA030N10N3G |
Infineon Technologies |
Power-Transistor |
|