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STB4N62K3 |
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| Part Number | STB4N62K3 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical struc... |
| Features |
Type STB4N62K3 STF4N62K3 STI4N62K3 STP4N62K3
■ ■ ■ ■ ■ ■ VDSS RDS(on) max ID Pw 70 W 25 W 70 W 70 W 1 3 1 2 3 620 V < 1.95 Ω D²PAK 3.8 A TO-220FP 100% avalanche tested 3 Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected Figure 1. I²PAK 3 12 1 2 TO-220 Application ■ Internal schematic diagram D(2) Switching applications Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ tec... |
| Document |
 STB4N62K3 Data Sheet
PDF 832.29KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STB4NB50 |
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| 2 | STB4NB80 |
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| 3 | STB4NC50 |
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| 4 | STB4NC60 |
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| 5 | STB4NC60-1 |
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