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IXFR64N50P |
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| Part Number | IXFR64N50P |
| Manufacturer | IXYS |
| Description | Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFR 64N50P ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 500 V = 43 A ≤ 100... |
| Features |
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International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode
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N/lb g
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Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 500 3.0 5.0 ±200 25 1000 100 V V nA µA µ... |
| Document |
 IXFR64N50P Data Sheet
PDF 140.99KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXFR64N50Q3 |
IXYS |
Power MOSFET |
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| 2 | IXFR64N60P |
IXYS |
PolarHV HiPerFET Power MOSFET |
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| 3 | IXFR66N50Q2 |
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HiPerFET Power MOSFETs Q-Class |
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| 4 | IXFR100N25 |
IXYS Corporation |
HiPerFET Power MOSFETs |
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| 5 | IXFR102N30P |
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