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IS42S16160D |
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| Part Number | IS42S16160D |
| Manufacturer | Integrated Silicon Solution |
| Description | A0-A12 A0-A9 BA0, BA1 DQ0 to DQ7 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Str... |
| Features |
• Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • Auto Refresh (CBR) • Self Refresh • 8K refresh cycles every 16 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade) • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • ... |
| Document |
 IS42S16160D Data Sheet
PDF 915.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IS42S16160 |
Integrated Silicon Solution |
16Meg x16 256-MBIT SYNCHRONOUS DRAM |
|
| 2 | IS42S16160B |
Integrated Silicon Solution |
256-MBIT SYNCHRONOUS DRAM |
|
| 3 | IS42S16160C |
ISSI |
256Mb Single Data Rate Synchronous DRAM |
|
| 4 | IS42S16160G |
ISSI |
256Mb SYNCHRONOUS DRAM |
|
| 5 | IS42S16160J |
ISSI |
256Mb SYNCHRONOUS DRAM |
|