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LET9006 |
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| Part Number | LET9006 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The LET9006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 ... |
| Features |
ate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 1 16 150 -65 to +150 Unit V V A W °C °C
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance 5 °C/W
April, 15 2003
1/4
LET9006
ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC
Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) gFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions ID = 1 mA VDS = 26 V VDS = 0 V ID = TBD ID = 0.5 A ID = 800 mA VDS = 26 V VDS = 26 V VDS = 26 V f... |
| Document |
 LET9006 Data Sheet
PDF 40.56KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LET9002 |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
|
| 2 | LET9045 |
ST Microelectronics |
RF power transistor |
|
| 3 | LET9045C |
ST Microelectronics |
RF power transistor |
|
| 4 | LET9045S |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
|
| 5 | LET9060C |
STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology |
|