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STD4NS25 |
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| Part Number | STD4NS25 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Co... |
| Features |
ntinuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 250 250 ± 20 4 2.5 16 50 0.4 5 –65 to 150 150 (1) ISD≤ 4A, di/dt≤300 A/µs, VDD≤ V (BR)DSS, Tj ≤TjMAX Unit V V V A A A W W/°C V/ns °C °C ( •)Pulse width limited by safe operating area February 2001 1/9 STD4NS25 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Max... |
| Document |
 STD4NS25 Data Sheet
PDF 221.68KB |
| Distributor | Stock | Price | Buy |
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