IXFN34N80 |
Part Number | IXFN34N80 |
Manufacturer | IXYS Corporation |
Description | HiPerFETTM Power MOSFETs Single DieMOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet IXFN 34N80 D VDSS = 800 V ID25 = 34 A RDS(on) = 0.24 W trr £ 250 ns ... |
Features |
· International standard packages · miniBLOC, with Aluminium nitride 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s 300 2500 3000 isolation · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g rated · Low package inductance · Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 0.096 3.0 -0.214 ±200 TJ = 25°C TJ = 125°C 100 2 0.24 5.0 V %/K V ... |
Document |
IXFN34N80 Data Sheet
PDF 163.67KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IXFN34N100 |
IXYS Corporation |
Power MOSFET | |
2 | IXFN340N06 |
IXYS Corporation |
HiPerFET Power MOSFETs Single Die MOSFET | |
3 | IXFN340N07 |
IXYS Corporation |
HiPerFET Power MOSFETs Single Die MOSFET | |
4 | IXFN300N10P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
5 | IXFN30N110P |
IXYS Corporation |
Polar Power MOSFET HiPerFET |