IXFN34N80 IXYS Corporation Power MOSFET Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

IXFN34N80

IXYS Corporation
IXFN34N80
IXFN34N80 IXFN34N80
zoom Click to view a larger image
Part Number IXFN34N80
Manufacturer IXYS Corporation
Description HiPerFETTM Power MOSFETs Single DieMOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet IXFN 34N80 D VDSS = 800 V ID25 = 34 A RDS(on) = 0.24 W trr £ 250 ns ...
Features
· International standard packages
· miniBLOC, with Aluminium nitride 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s 300 2500 3000 isolation
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS) Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g rated
· Low package inductance
· Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 0.096 3.0 -0.214 ±200 TJ = 25°C TJ = 125°C 100 2 0.24 5.0 V %/K V ...

Document Datasheet IXFN34N80 Data Sheet
PDF 163.67KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 IXFN34N100
IXYS Corporation
Power MOSFET Datasheet
2 IXFN340N06
IXYS Corporation
HiPerFET Power MOSFETs Single Die MOSFET Datasheet
3 IXFN340N07
IXYS Corporation
HiPerFET Power MOSFETs Single Die MOSFET Datasheet
4 IXFN300N10P
IXYS Corporation
Polar Power MOSFET HiPerFET Datasheet
5 IXFN30N110P
IXYS Corporation
Polar Power MOSFET HiPerFET Datasheet
More datasheet from IXYS Corporation



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact