3DD207 Inchange Semiconductor Silicon NPN Power Transistors Datasheet, en stock, prix

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3DD207

Inchange Semiconductor
3DD207
3DD207 3DD207
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Part Number 3DD207
Manufacturer Inchange Semiconductor
Description ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION...
Features otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 50mA; IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 1mA; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB=60V; IE= 0 IEBO Collector Cutoff Current VCB=6V; IC= 0 hFE DC Current Gain IC= 2A; VCE= 5V MIN MAX UNIT 60 V 60 V 6 V 1.0 V 1.5 V 0.5 mA 0.1 mA 40 250 NOTICE: ISC reserves the rights to make...

Document Datasheet 3DD207 Data Sheet
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