3LP02N |
Part Number | 3LP02N |
Manufacturer | Sanyo Semicon Device |
Description | www.DataSheet4U.com Ordering number:ENN6553 P-Channel Silicon MOSFET 3LP02N Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. Package D... |
Features |
· Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2178 5.0 4.0 [3LP02N] 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1.3 1.3 1 : Source 2 : Drain 3 : Gate SANYO : NP Ratings –30 ±10 –0.2 –0.8 0.4 150 –55 to +150 Unit V V A A W ˚C ˚C Electrical Charact... |
Document |
3LP02N Data Sheet
PDF 69.36KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3LP02C |
Sanyo Semicon Device |
P `lMOS `VRdEgWX^ XCb`Op | |
2 | 3LP02M |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
3 | 3LP02SP |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
4 | 3LP01C |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
5 | 3LP01M |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |