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GD1SS355 |
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| Part Number | GD1SS355 |
| Manufacturer | GTM |
| Description | S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 9 0 V, C U R R E N T 0 . 1 A The GD1SS355 is designed for ultra high speed switching and high reliability with high surge current ha... |
| Features |
ics
at Ta = 25
Symbol VF IR Max 1.20 0.1 Unit V uA Test Condition IF = 100mA VR = 80V
Characteristics Maximum Instantaneous Forward Voltage Maximum Average Reverse Current
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 6.0 volt. 2. Measured at applied forward current of 10mA and reverse voltage of 6.0 volt. 3. ESD sensitive product handling required.
1/2
ISSUED DATE :2004/09/20 REVISED DATE :
Characteristics Curve
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to ma... |
| Document |
 GD1SS355 Data Sheet
PDF 174.57KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GD1SS356 |
GTM |
SWITCHING DIODE |
|
| 2 | GD103SD |
GTM |
SWITCHING DIODE |
|
| 3 | GD10HF60KD |
STMicroelectronics |
short-circuit rugged IGBT |
|
| 4 | GD10NC60HD |
STMicroelectronics |
very fast IGBT |
|
| 5 | GD10NC60KD |
STMicroelectronics |
short-circuit rugged IGBT |
|