GD1SS356 - GTM

GD1SS356 SWITCHING DIODE

S U R F A C E M O U N T, B A N D S W I T C H I N G D I O D E V O LT A G E 3 5 V, C U R R E N T 0 . 1 A The GD1SS356 is designed for high frequency switching application. Features High reliability Small mode type Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. L b c Q1 Millimet.

Features

High reliability Small mode type Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. L b c Q1 Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Reverse Voltage(DC) Forward Current(DC) Junction Temperature Storage Temperature Total Power Dissipation Symbol VR IF Tj Tstg PD Ratings 35 100 +125 -55 ~ +150 225 mW Unit V mA Electrical Characteristics at Ta = 25 Parameter Reverse Breakdown Reverse Current(DC) Reverse Voltage(DC) Diode Capacitance Forward dynamic res.