GD10HF60KD - STMicroelectronics

GD10HF60KD short-circuit rugged IGBT

This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product ideal for diverse high voltage applications operating at high frequencies. Order code STGD10HF60KD Table 1..

Features

• Designed for automotive applications and AEC-Q101 qualified
• Low on-voltage drop (VCE(sat))
• Low Cres / Cies ratio (no cross conduction susceptibility)
• Switching losses include diode recovery energy
• Short-circuit rated
• Very soft Ultrafast recovery anti-parallel diode Figure 1. Internal schematic diagram Applications
• High frequency inverters
• SMPS and PFC in both hard switch and resonant topologies
• Motor drives
• Injection systems Description This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The c.