GD103SD - GTM

GD103SD SWITCHING DIODE

Package Dimensions The GD103SD is designed for low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time and low reverse capacitance. REF. A A1 A2 D E HE Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. L b c Q1 Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18 0.15 .

Features

verse Leakage Current Total Capacitance Reverse Recover Time Symbol V(BR)R VF(1) VF(2) IR CT Trr Min. 40 Typ. 5.0 10 Max. 370 600 5.0 Unit V mV mV A pF ns IR=10 A IF=20mA IF=200mA VR=30V VR=0V, f=1MHz IF=IR=200mA, IR(Rec)=20mA, RL=100 Test Conditions 1/2 ISSUED DATE :2005/01/10 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-.