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CEP13N10 |
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| Part Number | CEP13N10 |
| Manufacturer | CET |
| Description | CEP13N10/CEB13N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current ha... |
| Features |
100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 100
Units V V A A W W/ C C
±20
12.8 50 65 0.43 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Te... |
| Document |
 CEP13N10 Data Sheet
PDF 100.89KB |
| Distributor | Stock | Price | Buy |
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