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STS2320 |
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| Part Number | STS2320 |
| Manufacturer | ETC |
| Description | SamHop Microelectronics Corp. STS2320 Oct .29 2004 V1.1 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 20V FEATURES ( m W ) Max ID 3.6A RDS(ON) Super high dense cell des... |
| Features |
( m W ) Max
ID
3.6A
RDS(ON)
Super high dense cell design for low RDS(ON).
45@ VGS = 4.5V 65@ VGS =2.5V
Rugged and reliable. SOT-23 package.
D
SOT-23
D S G
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @TJ=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range
a
Symbol VDS VGS ID IDM IS PD TJ, TSTG
Limit 20 10 3.6 14 1.25 1.25 -55 to 150
Unit V V A A A W C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient... |
| Document |
 STS2320 Data Sheet
PDF 603.85KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STS2321 |
SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 2 | STS2300 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 3 | STS2300S |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 4 | STS2301 |
SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 5 | STS2301A |
SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor |
|