NDS9400A |
Part Number | NDS9400A |
Manufacturer | Fairchild |
Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to... |
Features |
-3.4A, -30V. RDS(ON) = 0.13Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Rugged and reliable.
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5 6
4 3
7
8
2
1
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation
T A= 25°C unless otherwise noted
NDS9400A -30 ± 20
(Note 1a)
Units V V A
± 3.4 ± 10
(Note 1a) (Note 1b) (Note 1c)
2.5 1.2 1 -55 to ... |
Document |
NDS9400A Data Sheet
PDF 329.34KB |
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