PF01410A Hitachi Semiconductor MOS FET Power Amplifier Module for GSM Handy Phone Datasheet, en stock, prix

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PF01410A

Hitachi Semiconductor
PF01410A
PF01410A PF01410A
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Part Number PF01410A
Manufacturer Hitachi Semiconductor
Description PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B (Z) Product Preview 3rd. Edition November 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.8 V operation 2...
Features



• 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ High speed switching : 1 µsec Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 3 4 50
  –30 to +100
  –30 to +100 4 Unit V A V mW °C °C W PF01410A Electrical Characteristics (Tc = 25°C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic dis...

Document Datasheet PF01410A Data Sheet
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