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Q62702-A1067 |
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| Part Number | Q62702-A1067 |
| Manufacturer | Siemens Semiconductor Group |
| Description | Silicon Schottky Diode q q q q BAS 40W General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code (tape and reel) Q62702... |
| Features |
otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage I(BR) = 10 µA Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Reverse current VR = 30 V VR = 40 V Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time IF = 25 mA Differential forward resistance Value typ. max. Unit
V(BR)
40 – 310 450 720 – – 3 10 10 2 – V mV 250 350 600 380 500 1000 µA – – 1 10 pF – 5 – – – nH ps Ω – – – VF IR CT τ RF LS IF = 10 mA, f = 10 kHz Series inductance Semiconductor Group 2 BAS 40W Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) ... |
| Document |
 Q62702-A1067 Data Sheet
PDF 141.08KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-A1065 |
Siemens Semiconductor Group |
Silicon Schottky Diode |
|
| 2 | Q62702-A1066 |
Siemens Semiconductor Group |
Silicon Schottky Diode |
|
| 3 | Q62702-A1068 |
Siemens Semiconductor Group |
Silicon Schottky Diode |
|
| 4 | Q62702-A1069 |
Siemens Semiconductor Group |
Silicon Schottky Diode |
|
| 5 | Q62702-A1004 |
Siemens Semiconductor Group |
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
|