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IRF7807D1 |
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| Part Number | IRF7807D1 |
| Manufacturer | International Rectifier |
| Description | The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power M... |
| Features |
(Max Values)
IRF7807D1
VDS RDS(on) Qg Qsw Qoss
30V 25mΩ 14nC 5.2nC 18.4nC
Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient
RθJA
Max. 50
Units °C/W
www.irf.com
1
11/8/99
IRF7807D1
Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* Static Drain-Source on Resistance* Drain-Source Leakage Current* V(BR)DSS RDS(on) 1.0 90 7.2
Min 30
Typ
Max
Units V
Conditions VGS = 0V, ID = 250µA VGS = 4.5V, ID = 7A VDS = VGS,ID = 250µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, Tj = 125°C VGS = +/-12V VDS<100mV, VGS = 5V, ID = 7A VDS= ... |
| Document |
 IRF7807D1 Data Sheet
PDF 165.81KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF7807D1PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 2 | IRF7807D2 |
International Rectifier |
MOSFET |
|
| 3 | IRF7807D2PbF |
International Rectifier |
MOSFET / SCHOTTKY DIODE |
|
| 4 | IRF7807 |
International Rectifier |
N-Channel Power MOSFET |
|
| 5 | IRF7807A |
International Rectifier |
N-Channel Power MOSFET |
|