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IXFN36N100 |
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| Part Number | IXFN36N100 |
| Manufacturer | ETC |
| Description | HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz,... |
| Features |
• International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25°C TJ = 125°C 5.0 ± 200 100 2 0.24 V V nA µA mA Ω • • • • Battery chargers Switched-mode and resonant-mode power ... |
| Document |
 IXFN36N100 Data Sheet
PDF 122.63KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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