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IXFN340N06 |
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| Part Number | IXFN340N06 |
| Manufacturer | IXYS Corporation |
| Description | Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt ... |
| Features |
International standard packages miniBLOC, with Aluminium nitride
isolation
Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS)
rated
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Low package inductance Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 60 2.0 4.0 ± 200 TJ = 25°C TJ = 125°C 100 2 3 V V nA mA mA mW
DC-DC converters Battery chargers Switched-mode and resonant-mode
power supplies
... |
| Document |
 IXFN340N06 Data Sheet
PDF 100.59KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXFN340N07 |
IXYS Corporation |
HiPerFET Power MOSFETs Single Die MOSFET |
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| 2 | IXFN34N100 |
IXYS Corporation |
Power MOSFET |
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| 3 | IXFN34N80 |
IXYS Corporation |
Power MOSFET |
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| 4 | IXFN300N10P |
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Polar Power MOSFET HiPerFET |
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| 5 | IXFN30N110P |
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Polar Power MOSFET HiPerFET |
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