KSC5042F - Fairchild Semiconductor

KSC5042F NPN Epitaxial Silicon Transistor

KSC5042F KSC5042F High Voltage Switchihg Dynamic Focus Application • • • • High Collector-Emitter Breakdown Voltage : BVCEO=900V Small Cob =2.8pF (Typ.) Wide S.O.A High reliability 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ.

Features

Output Capacitance Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 VCB = 900V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 10mA IC = 20mA, IB = 4mA IC = 20mA, IB = 4mA VCB = 100V, f = 1MHz 2.8 30 5 2 V V pF Min. 1500 900 5 10 10 Typ. Max. Units V V V µA µA ©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 KSC5042F Typical Characteristics 100 mA I B = 10 A I B = 9m 100 A I B = 8m A I B = 7m A I B = 6m VCE = 5V A I B = 5m IC[A], COLLECTOR CURRENT 80 A I B = 3m 60 A I B = 2m hFE, DC CURRENT GAIN 8 10 A I B = 4m 10 40 A I B = 1m 20 IB = 0mA 0 0 2 4 .