KSC5042 KSC5042 High Voltage Switchihg Dynamic Focus Application • • • • High Collector-Emitter Breakdown Voltage : BVCEO=900V Small Cob =2.8pF(Typ.) Wide S.O.A High reliability 1 TO-220 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TS.
ge Output Capacitance Test Condition IC=1mA, IE = 0 IC=5mA, IB = 0 IE=1mA, IC = 0 VCB=900V, IE = 0 VEB=4V, IC = 0 VCE=5V, IC = 10mA IC=20mA, IB = 4mA IC=20mA, IB = 4mA VCB=100V, f = 1MHz 2.8 30 5 2 V V pF Min. 1500 900 5 10 10 Typ. Max. Units V V V µA µA
* Pulse test: PW = 300µs, Duty Cycle = 2% pulsed
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC5042
Typical Characteristics
100
IB = 10mA
90
IB = 9mA IB = 8mA
IB = 7mA
VCE = 5V
IB = 6mA IB = 5mA IB = 4mA IB = 3mA IB = 2mA IB = 1mA
100
IC[A], COLLECTOR CURRENT
80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6
hFE, DC CURREN.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSC5042F |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
2 | KSC5042M |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
3 | KSC5047 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
4 | KSC5019 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
5 | KSC5020 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
6 | KSC5020 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
7 | KSC5020 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
8 | KSC5021 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
9 | KSC5021 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
10 | KSC5021 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | KSC5021F |
INCHANGE |
NPN Transistor | |
12 | KSC5021F |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |