FDZ208P |
Part Number | FDZ208P |
Manufacturer | Fairchild Semiconductor |
Description | Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low Rds Battery Protection MOSFET. This MOSFET also embodies a breakthroug... |
Features |
• –12.5 A, –30 V. RDS(ON) = 10.5 mΩ @ VGS = –10 V RDS(ON) = 16.5 mΩ @ VGS = –4.5 V • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 • Ultra-thin package: less than 0.80 mm height when mounted to PCB • 3.5 x 4 mm2 footprint • High power and current handling capability General Description Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low Rds Battery Protection MOSFET. This MOSFET also embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer charac... |
Document |
FDZ208P Data Sheet
PDF 211.81KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | FDZ201N |
Fairchild Semiconductor |
N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET | |
2 | FDZ202P |
Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET | |
3 | FDZ203N |
Fairchild Semiconductor |
N-Channel 2.5V Specified PowerTrench BGA MOSFET | |
4 | FDZ2040L |
Fairchild Semiconductor |
Integrated Load Switch | |
5 | FDZ204P |
Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrench |