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FDS6875 |
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| Part Number | FDS6875 |
| Manufacturer | Fairchild Semiconductor |
| Description | These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain ... |
| Features |
-6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V. Low gate charge (23nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D2 D1 D1 D2
5 4 3 2 1
S FD 75 68
G1 S2 G2
6 7 8
SO-8
pin 1
S1
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25oC unless otherwise noted FDS6875 -20 ±8
(Note 1a)
Units V V A
-6 -20 2
Power Dissipation for Dual Operati... |
| Document |
 FDS6875 Data Sheet
PDF 194.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDS6875 |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 2 | FDS6812A |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
|
| 3 | FDS6814 |
Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrench MOSFET |
|
| 4 | FDS6815 |
Fairchild Semiconductor |
Dual P-Channel 2.5V Specified PowerTrench MOSFET |
|
| 5 | FDS6890A |
Fairchild Semiconductor |
Dual N-Channel MOSFET |
|