FDD6685 |
Part Number | FDD6685 |
Manufacturer | Fairchild Semiconductor |
Description | This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive v... |
Features |
• –40 A, –30 V. RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 30 mΩ @ VGS = –4.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Qualified to AEC Q101 D G S G S TO-252 D Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed, PW ≤ 100µs (Note 1b) PD Power Dissipation for Single Operation (Note 1) (Note 1a) TJ, TSTG (Note 1b) Operating and Storage Junction ... |
Document |
FDD6685 Data Sheet
PDF 332.88KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDD6680 |
Fairchild Semiconductor |
30V N-Channel PowerTrench MOSFET | |
2 | FDD6680A |
Fairchild Semiconductor |
N-Channel/ Logic Level/ PowerTrench MOSFET | |
3 | FDD6680S |
Fairchild Semiconductor |
30V N-Channel PowerTrench SyncFET | |
4 | FDD6685 |
ON Semiconductor |
30V P-Channel MOSFET | |
5 | FDD6688 |
Fairchild Semiconductor |
30V N-Channel MOSFET |