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2SJ248 |
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| Part Number | 2SJ248 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SJ248 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V sourc... |
| Features |
• • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SJ248 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –100 ±20 –8 ... |
| Document |
 2SJ248 Data Sheet
PDF 33.58KB |
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