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SSD29N10J-C |
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| Part Number | SSD29N10J-C |
| Manufacturer | SeCoS |
| Description | The SSD29N10J-C is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.... |
| Features |
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
MARKING
29N10
Date Code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
SSD29N10J-C
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain Current @VGS=10V 1
ID
TC=100°C
Pulsed Drain Current 4
IDM
Total Power Dissipation 3
TC=25°C PD
TA=25°C
Operating Junction and Storage Temperature Range
TJ, TSTG... |
| Document |
 SSD29N10J-C Data Sheet
PDF 219.62KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSD2007A |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET |
|
| 2 | SSD2009A |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET |
|
| 3 | SSD2011A |
Fairchild Semiconductor |
Dual P-CHANNEL POWER MOSFET |
|
| 4 | SSD2019A |
Fairchild Semiconductor |
Dual P-Channel Power MOSFET |
|
| 5 | SSD2025 |
Fairchild Semiconductor |
Dual N-CHANNEL POWER MOSFET |
|