FDS6875 |
Part Number | FDS6875 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | Features These P-Channel 2.5V specified MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maint... |
Features |
These P-Channel 2.5V specified MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications: load switching and power management,
battery charging and protection circuits.
-6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V.
Low gate charge (23nC typical).
High performance trench technology for extremely low RDS(ON). High power and current handlin... |
Document |
FDS6875 Data Sheet
PDF 219.22KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS6875 |
Fairchild Semiconductor |
Dual P-Channel MOSFET | |
2 | FDS6812A |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | |
3 | FDS6814 |
Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrench MOSFET | |
4 | FDS6815 |
Fairchild Semiconductor |
Dual P-Channel 2.5V Specified PowerTrench MOSFET | |
5 | FDS6890A |
Fairchild Semiconductor |
Dual N-Channel MOSFET |