SW065R68E7T |
Part Number | SW065R68E7T |
Manufacturer | Samwin |
Description | This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate cha... |
Features |
TO-252
High ruggedness Low RDS(ON) (Typ 6.3mΩ)@VGS=10V Low Gate Charge (Typ 75nC) Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification, Li Battery Protect Board, Inverter 12 3 1. Gate 2.Drain 3.Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking 1 SW D 065R68E7T SW065R68E7T Ab... |
Document |
SW065R68E7T Data Sheet
PDF 683.48KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | SW06 |
Analog Devices |
Quad SPST JFET Analog Switch | |
2 | SW068R08ET |
Samwin |
N-channel MOSFET | |
3 | SW069R10VS |
Samwin |
N-channel MOSFET | |
4 | SW069R10VS |
INCHANGE |
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5 | SW038R10ES |
Samwin |
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