Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
IPB055N03L |
Click to view a larger image
| Part Number | IPB055N03L |
| Manufacturer | INCHANGE |
| Description | ·Drain Current :ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Designe... |
| Features |
Source Breakdown Voltage
VGS= 0; ID= 1mA
30
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
1
2.2
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=30A
5.5 mΩ
IGSS
Gate-Body Leakage Current
VGS= 20V;VDS= 0
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 30V; VGS= 0;Tj =25℃ VDS= 30V; VGS= 0;Tj =125℃
1 µA
100
VSD
Diode Forward On-Voltage
IF= 30A ;VGS= 0
1.1
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our p... |
| Document |
 IPB055N03L Data Sheet
PDF 238.22KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB055N03L |
Infineon |
MOSFET |
|
| 2 | IPB055N03LG |
Infineon Technologies |
MOSFET |
|
| 3 | IPB050N06N |
Infineon |
Power-Transistor |
|
| 4 | IPB050N06NG |
Infineon Technologies |
Power-Transistor |
|
| 5 | IPB051NE8N |
Infineon |
Power-Transistor |
|