IPB050N06NG - Infineon Technologies

IPB050N06NG Power-Transistor

OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant IPP050N06N G IPB050N06N G Product Summary V DS R DS(on),max SMDversion ID 60 V 4.7 m: 100 A Type IPP050N06N IPB050N06N Package Marking .

Features

• For fast switching converters and sync. rectification
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant IPP050N06N G IPB050N06N G Product Summary V DS R DS(on),max SMDversion ID 60 V 4.7 m: 100 A Type IPP050N06N IPB050N06N Package Marking PG-TO220-3 050N06N PG-TO263-3 050N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T C=25 °C1) T C=100 °C T C=25 °C2) Avalanche energy, single pulse E AS I D=100 A,.