IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 85 V 5.1 mΩ 100 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for .
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max (TO 263) ID
85 V 5.1 mΩ 100 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB051NE8N G
IPI05CNE8N G
IPP054NE8N G
Package Marking
PG-TO263-3 051NE8N
PG-TO262-3 05CNE8N
PG-TO220-3 054NE8N
Maximum ratings, at T j=25 °C, unless otherwise specified
P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPB051NE8NG |
Infineon |
Power-Transistor | |
2 | IPB050N06N |
Infineon |
Power-Transistor | |
3 | IPB050N06NG |
Infineon Technologies |
Power-Transistor | |
4 | IPB052N04N |
Infineon |
Power-Transistor | |
5 | IPB052N04NG |
Infineon Technologies |
Power-Transistor | |
6 | IPB054N06N3 |
INCHANGE |
N-Channel MOSFET | |
7 | IPB054N06N3 |
Infineon |
Power-Transistor | |
8 | IPB054N06N3G |
Infineon |
Power-Transistor | |
9 | IPB054N08N3 |
Infineon |
Power-Transistor | |
10 | IPB054N08N3G |
INCHANGE |
N-Channel MOSFET | |
11 | IPB054N08N3G |
Infineon |
Power-Transistor | |
12 | IPB055N03L |
Infineon |
MOSFET |