Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free a.
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPP055N03L G
IPB055N03L G
Product Summary V DS R DS(on),max ID
IPP055N03L G IPB055N03L G
30 V 5.5 mΩ 50 A
Package Marking
PG-TO220-3-1 055N03L
PG-TO263-3 055N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Cond.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPB055N03L |
Infineon |
MOSFET | |
2 | IPB055N03L |
INCHANGE |
N-Channel MOSFET | |
3 | IPB050N06N |
Infineon |
Power-Transistor | |
4 | IPB050N06NG |
Infineon Technologies |
Power-Transistor | |
5 | IPB051NE8N |
Infineon |
Power-Transistor | |
6 | IPB051NE8NG |
Infineon |
Power-Transistor | |
7 | IPB052N04N |
Infineon |
Power-Transistor | |
8 | IPB052N04NG |
Infineon Technologies |
Power-Transistor | |
9 | IPB054N06N3 |
INCHANGE |
N-Channel MOSFET | |
10 | IPB054N06N3 |
Infineon |
Power-Transistor | |
11 | IPB054N06N3G |
Infineon |
Power-Transistor | |
12 | IPB054N08N3 |
Infineon |
Power-Transistor |